Project Overview
This project focuses on comprehensive TCAD simulation of modern FinFET and Gate-All-Around (GAFET) devices. The simulation includes detailed device structure modeling, mesh optimization, and full electrical characterization to understand device physics and optimize performance for advanced technology nodes. Advanced analysis covers threshold voltage, subthreshold slope, drain-induced barrier lowering, and hot carrier effects.
Performance Metrics
Threshold Voltage
~418 mV
Optimized for low power
On/Off Ratio
~10⁶
Room temperature
Subthreshold Slope
~65 mV/dec
Near ideal switching
Design Specifications
architecture Device Structure
- • Channel width: 5 nm (FinFET) / 10 nm (GAFET)
- • Gate length: 14 nm minimum drawn length
- • Fin height: 30-50 nm (process dependent)
- • Technology: 14nm / 7nm advanced logic nodes
engineering Simulation Parameters
- • Mesh points: >500k nodes for high accuracy
- • Physics models: Drift-diffusion with field-dependent mobility
- • Temperature range: 250K to 400K analysis
- • Process variations: Monte Carlo statistical analysis
Tools & Technologies
Access Full Documentation
Download the comprehensive analysis report including device structure details, simulation methodology, electrical characteristics, and comprehensive performance analysis.
file_download Download Full Report (PDF)