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TCAD-03
memory Device Simulation

MOSCAP TCAD Simulation & Analysis

Comprehensive Metal-Oxide-Semiconductor Capacitor (MOSCAP) TCAD simulation featuring detailed oxide characterization, charge behavior analysis, and capacitance-voltage characterization across varying bias and frequency conditions.

Project Overview

This project focuses on detailed MOSCAP TCAD simulation for understanding oxide-semiconductor interfaces. The simulation includes comprehensive process simulation for oxide growth, carrier transport mechanisms, and complete C-V characterization under various conditions. Analysis covers interface states, fixed oxide charge, mobile charges, and frequency-dependent behavior critical for understanding gate oxide reliability and performance.

Performance Metrics

bolt

Peak Capacitance

~8.5 µF/cm²

at accumulation

straighten

Flatband Voltage

~0.85 V

oxide thickness: 5nm

verified

Interface States

~2×10⁻¹¹ F

per interface charge

Design Specifications

architecture Structure Parameters

  • • Oxide material: SiO₂ with various thicknesses
  • • Thickness range: 5 nm to 50 nm
  • • Substrate type: n-type and p-type silicon
  • • Doping concentration: 10¹⁵ - 10¹⁷ cm⁻³

engineering Simulation Configuration

  • • Process steps: Oxidation, implantation, thermal budget
  • • C-V analysis: 1D device simulation with bias sweep
  • • Frequency range: DC to 1 MHz frequency analysis
  • • Temperature sweep: 250K to 400K conditions

Tools & Technologies

Sentaurus TCAD Process Simulation Device Simulation C-V Characterization Interface Analysis Data Visualization

Access Full Documentation

Download the comprehensive analysis report containing process simulation details, C-V characterization data, interface state analysis, and complete oxide characterization results.

file_download Download Full Report (PDF)