Project Overview
This project encompasses comprehensive MOSFET TCAD simulation and characterization for planar and advanced device geometries. The simulation includes complete device physics modeling with detailed process simulation, 2D/3D device structure generation, and I-V/C-V characterization. Analysis covers various doping profiles, oxide thicknesses, and geometry variations to optimize device performance metrics and understand physical behavior under different operating conditions.
Performance Metrics
Peak Transconductance
~345 µS
at Vgs = 5V
Channel Mobility
~520 cm²/Vs
Electron mobility
Leakage Current
~10⁻¹⁴ A
Off-state leakage
Design Specifications
architecture Device Geometry
- • Channel length: 0.35 µm to 1.0 µm
- • Channel width: 1 µm to 100 µm
- • Gate oxide: 5-20 nm SiO₂ equivalent
- • Device type: NMOS and PMOS configurations
engineering Analysis Approach
- • Process simulation: Implant, diffusion, and oxidation steps
- • Device simulation: 2D steady-state and transient analysis
- • Characterization: Complete I-V and C-V curves
- • Optimization: Parameter sweeps and sensitivity analysis
Tools & Technologies
Access Full Documentation
Download the complete simulation report with detailed methodology, process and device simulation parameters, comprehensive I-V/C-V analysis, and optimization results.
file_download Download Full Report (PDF)