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TCAD-04
memory Device Simulation

PN Junction Diode TCAD Simulation

In-depth device-level TCAD simulation of PN junction diodes featuring detailed junction physics, carrier transport mechanisms, reverse breakdown analysis, and complete I-V characterization across wide bias ranges.

Project Overview

This project encompasses comprehensive PN junction diode simulation using advanced TCAD tools. The simulation includes detailed modeling of junction physics, thermal effects, carrier recombination mechanisms, and avalanche breakdown phenomena. Complete electrical characterization covers forward bias operation, reverse bias behavior, and dynamic response analysis critical for understanding diode performance in rectification, switching, and protection applications.

Performance Metrics

bolt

Saturation Current

~10⁻¹⁴ A

at room temperature

straighten

Forward Voltage

~0.7 V

at 1 mA current

verified

Breakdown Voltage

~-50 V

reverse bias limit

Design Specifications

architecture Junction Parameters

  • • Junction depth: 0.5 µm to 2 µm
  • • Doping concentration: N-side: 1×10²⁰ cm⁻³, P-side: 1×10¹⁹ cm⁻³
  • • Junction area: Microelectronic scale (0.5 - 1000 µm²)
  • • Material system: Silicon homojunction

engineering Simulation Scope

  • • Physics models: Complete Shockley-Read-Hall recombination
  • • Analysis type: DC and transient I-V characterization
  • • Bias range: -100V to +1V comprehensive sweep
  • • Temperature variation: 200K to 450K range study

Tools & Technologies

Sentaurus TCAD Process Simulation Device Simulation I-V Characterization Breakdown Analysis Thermal Simulation

Access Full Documentation

Download the complete simulation analysis report including junction physics details, process simulation parameters, comprehensive I-V curves, and breakdown behavior analysis.

file_download Download Full Report (PDF)